HM-6617883资料

HM-6617/883March 1997

2K x 8 CMOS PROM

DescriptionThe HM-6617/883 is a 16,384-bit fuse link CMOS PROM ina 2K word by 8-bit/word format with “Three-State” outputs.This PROM is available in the standard 0.600 inch wide 24pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDECstandard 32 pad CLCC.The HM-6617/883 utilizes a synchronous design technique.This includes on-chip address latches and a separate outputenable control which makes this device ideal for applicationsutilizing recent generation microprocessors. This designtechnique, combined with the Intersil advanced self-alignedsilicon gate CMOS process technology offers ultra-lowstandby current. Low ICCSB is ideal for battery applicationsor other systems with low power requirements.The Intersil NiCr fuse link technology is utilized on this andother Intersil CMOS PROMs. This gives the user a PROMwith permanent, stable storage characteristics over the fullindustrial and military temperature voltage ranges. NiCr fusetechnology combined with the low power characteristics ofCMOS provides an excellent alternative to standard bipolarPROMs or NMOS EPROMs.All bits are manufactured storing a logical “0” and can beselectively programmed for a logical “1” at any bit location.Features•This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions ofParagraph 1.2.1.•Low Power Standby and Operating Power-ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA-ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . .20mA at 1MHz•Fast Access Time. . . . . . . . . . . . . . . . . . . . . . .90/120ns•Industry Standard Pinout•Single 5.0V Supply•CMOS/TTL Compatible Inputs•High Output Drive . . . . . . . . . . . . . . . .12 LSTTL Loads•Synchronous Operation•On-Chip Address Latches•Separate Output Enable•Operating Temperature Range. . . . . .-55oC to +125oCOrdering InformationPACKAGESBDIPSLIM SBDIPCLCCTEMPERATURE RANGE-55oC to +125oC-55oC to +125oC-55oC to +125oC90nsHM1-6617B/883HM6-6617B/883HM4-6617B/883120nsHM1-6617B/883HM6-6617B/883HM4-6617B/883PACKAGE NO.D24.6D24.3J32.APinoutsHM-6617/883 (SBDIP)TOP VIEWA7A7A6A5A4A3A2A1A0Q0123456724VCC23A822A921P20G19A1018E17Q716Q615Q514Q413Q3HM-6617/883 (CLCC)TOP VIEWVCCNCNCNCNCNCPIN DESCRIPTIONPIN29A828A927NC26P25G24A1023E22Q721Q6DESCRIPTIONNo ConnectAddress InputsChip EnableData OutputPower (+5V)Output EnableProgram Enable4A65A56A47A38A29A110A011NC12Q013321323130NCA0-A10EQVCCGP (Note)Q110Q211GND1214151617181920Q1Q2NCQ3Q4GNDQ5NOTE:P should be hardwired to VCCexcept during programming.CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.http://www.intersil.com or 407-727-9207|Copyright © Intersil Corporation 1999

File Number

3016.1

6-250

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HM-6617/883Functional DiagramMSBA10A9A8A7A6A5A4ALATCHEDADDRESSREGISTERALSBL7Q2G1616161616161616GEGATED COLUMNDECODER AND DATAOUTPUT CONTROLA4GLALL LINES POSITIVE LOGIC:ACTIVE HIGHMSBA3A2A1A0THREE-STATE BUFFERS:A HIGHOUTPUT ACTIVEADDRESS LATCHES AND GATED DECODERS:LATCH ON FALLING EDGE OFEGATE ON FALLING EDGE OFGLATCHED ADDRESSREGISTERLSBA4Q6Q78Q3Q4Q57GATEDROWDECODER128 x 128MATRIXQ0Q11286-251

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HM-6617/883Absolute Maximum RatingsSupply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0VInput, Output or I/O Voltage . . . . . . . . . . .GND -0.3V to VCC +0.3VTypical Derating Factor. . . . . . . . . . . .5mA/MHz Increase in ICCOPESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1Thermal InformationThermal ResistanceθJAθJCooSBDIP Package. . . . . . . . . . . . . . . . . .48C/W9C/WoSlim SBDIP . . . . . . . . . . . . . . . . . . . . .65C/W14oC/WCLCC Package . . . . . . . . . . . . . . . . . .58oC/W19oC/WoMaximum Storage Temperature Range . . . . . . . . .-65C to +150oCMaximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . .+175oCMaximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300oCOperating ConditionsOperating Voltage Range. . . . . . . . . . . . . . . . . . . . .+4.5V to +5.5VOperating Temperature Range. . . . . . . . . . . . . . . .-55oC to +125oCInput Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +0.8VInput High Voltage . . . . . . . . . . . . . . . . . . . . . . +2.4V to VCC +0.3VDie CharacteristicsGate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5473 GatesCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationof the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.TABLE1.HM-6617/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONSDevice Guaranteed and 100% TestedLIMITSPARAMETERHigh Level Output VoltageLow Level Output VoltageHigh Impedance OutputLeakage CurrentInput Leakage CurrentSYMBOLVOH1VOLIIOZ(NOTES 1, 4)CONDITIONSVCC = 4.5V, IO = -2.0mAVCC = 4.5V, IO = +4.8mAVCC = 5.5V,G = 5.5V,VI/O = GND or VCCVCC = 5.5V, VI = GND orVCC,P Not TestedVI = VCC or GND,VCC = 5.5V, IO = 0mAVCC = 5.5V,G = GND,(Note 3), f = 1MHz, IO =0mA, VI = VCC or GNDVCC = 4.5V (Note 6)GROUP ASUBGROUPS1, 2, 31, 2, 31, 2, 3TEMPERATURE-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oCMIN2.4--1.0MAX-0.41.0UNITSVVµAII1, 2, 3-1.01.0µAStandby Supply CurrentICCSB1, 2, 3 -100µAOperating Supply CurrentICCOP1, 2, 3-20mAFunctional TestFT7, 8A, 8B-55oC≤ TA≤ +125oC--TABLE2.HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONSDevice Guaranteed and 100% TestedLIMITSLIMITSHM-6617B/883HM-6617/883PARAMETERAddress Access TimeSYMBOLTAVQV(NOTES 1, 2, 4)CONDITIONSVCC = 4.5V and 5.5V(Note 5)VCC = 4.5V and 5.5VGROUP ASUBGROUPS9, 10, 11TEMPERATURE-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oCMIN-MAX105MIN-MAX140UNITSnsOutput Enable AccessTimeChip Enable AccessTimeAddress Setup TimeAddress Hold TimeChip Enable Low WidthChip Enable High WidthTGLQV9, 10, 11-40-50nsTELQVVCC = 4.5V and 5.5V9, 10, 11-90-120nsTAVELTELAXTELEHTEHELVCC = 4.5V and 5.5VVCC = 4.5V and 5.5VVCC = 4.5V and 5.5VVCC = 4.5V and 5.5V9, 10, 119, 10, 119, 10, 119, 10, 1115209540----202512040----nsnsnsns6-252

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HM-6617/883TABLE2.HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)Device Guaranteed and 100% TestedLIMITSLIMITSHM-6617B/883HM-6617/883PARAMETERRead Cycle TimeSYMBOLTELEL(NOTES 1, 2, 4)CONDITIONSVCC = 4.5V and 5.5VGROUP ASUBGROUPS9, 10, 11TEMPERATURE-55oC≤ TA≤ +125oCMIN136MAX-MIN160MAX-UNITSnsNOTES:1.All voltages referenced to Device GND.2.AC measurements assume transition time≤ 5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equiva-lent load and CL≅ 50pF.3.Typical derating = 5mA/MHz increase in ICCOP.4.All tests performed withP hardwired to VCC.5.TAVQV = TELQV + TAVEL.6.Tested as follows: f = 1MHz, VIH = 2.4V, VIL = 0.8V, IOH = -1mA, IOL = +1mA, VOH≥ 1.5V, VOL≤ 1.5V.TABLE3.HM-6617/883 AC AND DC ELECTRICAL PERFORMANCE SPECIFICATIONSLIMITSHM-6617B/883PARAMETERInput CapacitanceLIMITSHM-6617/883MIN-SYMBOLCIN(NOTES 1, 2)CONDITIONSVCC = Open, f = 1MHz, AllMeasurements Referenced toDevice GNDVCC = Open, f = 1MHz, AllMeasurements Referenced toDevice GNDNOTES2, 3TEMPERATURE+25oCMIN-MAX10MAX10UNITSpF2, 42, 52, 3+25oC+25oC+25oC---121012---121012pFpFpFI/O CapacitanceCI/OVCC = Open, f = 1MHz, AllMeasurements Referenced toDevice GNDVCC = Open, f = 1MHz, AllMeasurements Referenced toDevice GND2, 42, 522222+25oC+25oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC-55oC≤ TA≤ +125oC--55--VCC-1V1412--4540---55--VCC-1V1412--5050-pFpFnsnsnsnsVChip Enable TimeOutput Enable TimeChip Disable TimeOutput Disable TimeOutput High VoltageTELQXTGLQXTEHQZTGHQZVOH2VCC = 4.5V and 5.5VVCC = 4.5V and 5.5VVCC = 4.5V and 5.5VVCC = 4.5V and 5.5VVCC = 4.5V, IO = 100µANOTES:1.All tests performed withP hardwired to VCC.2.The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are char-acterized upon initial design changes which would affect these characteristics.3.Applies to 0.600 inch SBDIP device types only.4.Applies to 0.300 inch SBDIP device types only.5.Applies to Ceramic Leadless Chip Carrier (CLCC) device types only.6-253

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HM-6617/883TABLE4.APPLICABLE SUBGROUPSCONFORMANCE GROUPSInitial TestInterim TestPDAFinal TestGroup AGroups C & DMETHOD100%/5004100%/5004100%/5004100%/5004Samples/5005Samples/5005SUBGROUPS-1, 7, 912, 3, 8A, 8B, 10, 111, 2, 3, 7, 8A, 8B, 9, 10, 111, 7, 9Switching WaveformsTAVQV1.5VVALIDADDRESSTAVEL1.5VTEHELG1.5VTGLQXTGHQZDATAOUTPUTQ0-Q7TELQXVALIDDATATSTELAX1.5VTELQVTGLQV1.5V1.5VTELELTELEH1.5VTEHQZ3.0V0V1.5V0VVALIDADDRESSES3.0V0V3.0VADDRESSESEFIGURE 1.READ CYCLETest CircuitDUTCL(NOTE)IOHNOTE:TEST HEADCAPACITANCE±1.5VIOLEQUIVALENT CIRCUITFIGURE 2.TEST CIRCUIT6-254

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HM-6617/883Burn-In CircuitsHM-6617/883 (.300 INCH) SBDIPVCCCf8f7f6f5f4f3f2f12.4KVCC/22.4K2.4K1A72A63A54A45A36A27A18A09Q010Q111Q212GNDGNDVCC24A823A922P21G20A1019E18Q717Q616Q515Q414Q3132.4K2.4K2.4K2.4K2.4KVCC/2VCC/2f9f10VCCf12f11f0f8f7f6f5f4f3f2f11234567A7A6A5A4A3A2A1A0Q0VCC24A623A522P21G20A1019E18Q717Q616Q515Q414Q313VCC/2f11f12VCCf1f13f0HM-6617/883 (.600 INCH) SBDIPVCCC10Q111Q212GNDGNDHM-6617/883 CLCCf10VCCCNCNCNCNCNC4321323130f9f8f7f6f5f4f35671011NC12VCC/21314151617181920NC292827NC262524232221f1f13f0VCC/2f11f12VCCVCC/2VCC/2NOTES:f0 = 100KHz± 10%.All resistors = 47kΩ Unless Otherwise Noted.VCC = 5.5V± 0.05V.C = 0.01µF min.6-255

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HM-6617/883Die CharacteristicsDIE DIMENSIONS:140 x 232 x 19± 1milsMETALLIZATION:Type: Si - AlThickness: 11kű15kÅGLASSIVATION:Type: SiO2Thickness: 7kű 9kÅWORST CASE CURRENT DENSITY:1.7 x 105 A/cm2Metallization Mask LayoutHM-6617/883A4A5A3A2A6A7VCCA8A9PGA10A1A0Q0Q1Q2GNDQ3Q4Q5Q6EQ7All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification.Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time withoutnotice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurateand reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties whichmay result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com6-256