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专利名称：Electronic device comprising a field effect
transistor for high-frequency aplications
发明人：Thomas Christian Roedle,Hendrikus
Ferdinand Francisco Jos,Stephan Jo CecileHenri Theeuwen,Petra Christina AnnaHammes,Radjindrepersad Gajadharsing
申请号：US10555054申请日：20040428
公开号：US20060231905A1公开日：20061019
专利附图：
摘要：An electronic device comprising a field-effect transistor having an inter digitatedstructure suitable for high-frequency power applications, and having multiple thresholdvoltages that are provided in different regions of each a segment of the interdigitatedstructure. This leads to a dramatic improvement in linearity over a large power range inthe back-off region under class AB signal operation.
申请人：Thomas Christian Roedle,Hendrikus Ferdinand Francisco Jos,Stephan Jo CecileHenri Theeuwen,Petra Christina Anna Hammes,Radjindrepersad Gajadharsing
地址：Nijmegen NL,Nijmegen NL,Nijmegen NL,Nijmegen NL,Nijmegen NL
国籍：NL,NL,NL,NL,NL
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