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专利名称：CMOS image sensor and method for
fabricating the same
发明人：Lim Keun Hyuk申请号：US11507346申请日：20060821
公开号：US20070051990A1公开日：20070308
专利附图：
摘要：A CMOS image sensor and a method of fabricating the same are provided. TheCMOS image sensor includes: a semi conductor substrate of a first conductivity typehaving a photodiode region and a transistor region defined therein; a gate electrode
formed above the transistor region of the semiconductor substrate with a gate insulatinglayer interposed therebetween; a first impurity region formed of the first conductivitytype in the semiconductor substrate below the gate electrode and having a higherconcentration of first conductivity type ions than the semiconductor substrate; and asecond impurity region formed of a second conductivity type in the photodiode region ofthe semiconductor substrate.
申请人：Lim Keun Hyuk
地址：Seoul KR
国籍：KR
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