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专利名称：CMOS image sensor and method for
fabricating the same
发明人：Meng An Jung申请号：US11312352申请日：20051221公开号：US07579639B2公开日：20090825
专利附图：
摘要：A CMOS image sensor that includes a semiconductor substrate with a pluralityof photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlaping the plurality of photodiodes and an insulating
interlayer are formed on an entire surface of the semiconductor substrate including theplurality of photodiodes. A color filter layer having a plurality of color filters separatedby a predetermined gap is formed on the insulating interlayer and a planarization layer isformed over the entire surface of the semiconductor substrate including the color filterlayer. A plurality of microlenses are formed on the planarization layer in correspondencewith the color filters of the color filter layer, wherein an additional structural layer,disposed between the color filter layer and the insulating interlayer, is provided to closea predetermined gap between the color filters of the color filter layer.
申请人：Meng An Jung
地址：Eumseong-gun KR
国籍：KR
代理机构：McKenna Long & Aldridge LLP
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