FCH20N60资料

FCH20N60 / FCA20N60 600V N-Channel MOSFETSuperFETFCH20N60 / FCA20N60 600V N-Channel MOSFETFeatures•650V @TJ = 150°C•Typ.RDS(on) = 0.15Ω•Ultra low gate charge (typ. Qg = 75nC)•Low effective output capacitance (typ. Coss.eff = 165pF)•100% avalanche testedescriptionSuperFETTM is, Farichild’s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced chargebalance mechanism for outstanding low on-resistance andlower gate charge performance. This advanced technology has been tailored to minimize con-duction loss, provide superior switching performance, and with-stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for system min-iaturization and higher efficiency.D!\"G!GDS !\"\"\"TO-247GDSTO-3P!SAbsolute Maximum RatingsSymbolVDSSIDIDMVGSSEASIAREARdv/dtPDTJ, TSTGTLDrain-Source VoltageDrain CurrentDrain CurrentGate-Source voltageSingle Pulsed Avalanche EnergyAvalanche CurrentRepetitive Avalanche EnergyPeak Diode Recovery dv/dtPower Dissipation(TC = 25°C)- Derate above 25°C(Note 2)(Note 1)(Note 1)(Note 3)Parameter- Continuous (TC = 25°C)- Continuous (TC = 100°C)- Pulsed (Note 1)FCH20N60600FCA20N60UnitVAAAVmJAmJV/nsWW/°C°C°C2012.560± 306902020.84.52081.67-55 to +150300 Operating and Storage Temperature RangeMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 SecondsThermal CharacteristicsSymbolRθJCRθCSRθJAParameterThermal Resistance, Junction-to-CaseThermal Resistance, Case-to-SinkThermal Resistance, Junction-to-AmbientTyp.--0.24--Max.0.6--41.7Unit°C/W°C/W©2005 Fairchild Semiconductor Corporation1www.fairchildsemi.comFCH20N60 / FCA20N60 Rev. A元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFETPackage Marking and Ordering InformationDevice MarkingFCH20N60FCA20N60DeviceFCH20N60FCA20N60PackageTO-247TO-3PReel Size--Tape Width--Quantity3030Electrical Characteristics T = 25°C unless otherwise notedCSymbolOff CharacteristicsBVDSS∆BVDSS/ ∆TJBVDSIDSSIGSSFIGSSRVGS(th)RDS(on)gFSCissCossCrssCossCoss eff.td(on)trtd(off)tfQgQgsQgdISISMVSDtrrQrrNotes:ParameterDrain-Source Breakdown VoltageBreakdown Voltage Temperature CoefficientDrain-Source Avalanche BreakdownVoltageZero Gate Voltage Drain CurrentGate-Body Leakage Current, ForwardGate-Body Leakage Current, ReverseGate Threshold VoltageStatic Drain-SourceOn-ResistanceForward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceOutput CapacitanceEffective Output CapacitanceTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeConditionsVGS = 0V, ID = 250µA, TJ = 25°CVGS = 0V, ID = 250µA, TJ = 150°CID = 250µA, Referenced to 25°CVGS = 0V, ID = 20AVDS = 600V, VGS = 0VVDS = 480V, TC = 125°CVGS = 30V, VDS = 0VVGS = -30V, VDS = 0VVDS = VGS, ID = 250µAVGS = 10V, ID = 10AVDS = 40V, ID = 10AVDS = 25V, VGS = 0V,f = 1.0MHz(Note 4)Min600--------------3.0--------------------(Note 4, 5)Typ--6500.6700----------0.151723701280956516562140230657513.536------53010.5MaxUnits--------110100-1005.00.19--30801665--85--1352904701409818--20601.4----VVV/°CVµAµAnAnAVΩSpFpFpFpFpFnsnsnsnsnCnCnCAAVnsµCOn CharacteristicsDynamic CharacteristicsVDS = 480V, VGS = 0V, f = 1.0MHzVDS = 0V to 400V, VGS = 0VVDD = 300V, ID = 20ARG = 25ΩSwitching Characteristics------------------VDS = 480V, ID = 20AVGS = 10V(Note 4, 5)Drain-Source Diode Characteristics and Maximum RatingsMaximum Continuous Drain-Source Diode Forward CurrentMaximum Pulsed Drain-Source Diode Forward CurrentDrain-Source Diode Forward VoltageReverse Recovery TimeReverse Recovery ChargeVGS = 0V, IS = 20AVGS = 0V, IS = 20AdIF/dt =100A/µs (Note 4)1. Repetitive Rating: Pulse width limited by maximum junction temperature2. IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsFCH20N60 / FCA20N60 Rev. A2www.fairchildsemi.com元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFETTypical Performance CharacteristicsFigure 1. On-Region Characteristics 102Figure 2. Transfer Characteristics 102 VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 VID, Drain Current [A]ID , Drain Current [A]101101150°C 25°C-55°C100100 Notes : 1. 250µs Pulse Test 2. TC = 25°C Note 1. VDS = 40V 2. 250µs Pulse Test10-1100101246810VDS, Drain-Source Voltage [V]VGS , Gate-Source Voltage [V]Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.4Figure 4. Body Diode Forward VoltageVariation vs. Source Current and Temperatue 1020.3VGS = 10VIDR , Reverse Drain Current [A]RDS(ON) [O],Drain-Source On-Resistance101VGS = 20V0.1 150°C10025°C Notes : 1. VGS = 0V 2. 250µs Pulse Test Note : TJ = 25°C0.005101520253035404550556065700.20.40.60.81.01.21.41.6ID, Drain Current [A]VSD , Source-Drain Voltage [V]Figure 5. Capacitance Characteristics 10000900080007000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = CgdFigure 6. Gate Charge Characteristics 12VDS = 100VVGS, Gate-Source Voltage [V]10VDS = 250VVDS = 400VCapacitance [pF]6000500040003000200010000-110Coss Notes : 1. VGS = 0 V 2. f = 1 MHz86 Ciss4Crss2 Note : ID = 20A100101001020304050607080VDS, Drain-Source Voltage [V]QG, Total Gate Charge [nC]FCH20N60 / FCA20N60 Rev. A3www.fairchildsemi.com 0.2元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFETTypical Performance Characteristics (Continued)Figure 7. Breakdown Voltage Variationvs. Temperature 1.23.0Figure 8. On-Resistance Variation vs. Temperature BVDSS, (Normalized)Drain-Source Breakdown VoltageDrain-Source On-Resistance2.51.1RDS(ON), (Normalized)2.01.01.5 0.9 Notes : 1. VGS = 0 V 2. ID = 250µA1.0 Notes : 1. VGS = 10 V 2. ID = 20 A0.50.8-100-500501001502000.0-100-50050100150200TJ, Junction Temperature [°C]TJ, Junction Temperature [°C]Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature 25102Operation in This Area is Limited by R DS(on)100 us20ID, Drain Current [A]1011 ms10 msDCID, Drain Current [A]15100 1010-1 Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse510-21001011021030255075100125150VDS, Drain-Source Voltage [V]TC, Case Temperature [°C]Figure 11. Transient Thermal Response Curve 100ZθJC(t), Thermal ResponseD=0.5 Notes : 1. ZθJC(t) = 0.6 ?/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t)10-10.20.10.050.020.01PDMt1single pulset210-210-510-410-310-210-1100101t1, Square Wave Pulse Duration [sec]FCH20N60 / FCA20N60 Rev. A4 www.fairchildsemi.com 元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform50KΩ12V200nF300nFSame Typeas DUTVDSVGSQg10VQgsQgdVGSDUT3mACharge Resistive Switching Test Circuit & WaveformsVDSRGVGSRLVDDVDS90%10VDUTVGS10%td(on)tontrtd(off)tofftf Unclamped Inductive Switching Test Circuit & WaveformsLVDSIDRG10Vt pBVDSS12------------------------EAS =LIAS2BVDSS-VDDBVDSSIASVDDID (t)VDDt pDUTVDS (t)TimeFCH20N60 / FCA20N60 Rev. A5www.fairchildsemi.com元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & WaveformsDUT+VDS_ISDLDriverRGSame Type as DUTVDDVGS•dv/dtcontrolled by RG•ISDcontrolled by pulse period VGS( Driver )Gate Pulse WidthD =--------------------------Gate Pulse Period10VIFM, Body Diode Forward CurrentISD( DUT )IRMdi/dtBody Diode Reverse CurrentVDS( DUT )Body Diode Recoverydv/dtVSDVDDBody DiodeForward Voltage DropFCH20N60 / FCA20N60 Rev. A6www.fairchildsemi.com元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFETMechanical DimensionsTO-247AD (FKS PKG CODE 001)Dimensions in MillimetersFCH20N60 / FCA20N60 Rev. A7www.fairchildsemi.com元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFETMechanical Dimensions (Continued)TO-3P15.60 ±0.203.80 ±0.2013.60 ±0.20ø3.20 ±0.109.60 ±0.204.80 ±0.201.50–0.05+0.1512.76 ±0.2019.90 ±0.2016.50 ±0.303.00 ±0.201.00 ±0.203.50 ±0.202.00 ±0.2013.90 ±0.2023.40 ±0.2018.70 ±0.201.40 ±0.205.45TYP[5.45 ±0.30]5.45TYP[5.45 ±0.30]0.60–0.05+0.15Dimensions in MillimetersFCH20N60 / FCA20N60 Rev. A8www.fairchildsemi.com元器件交易网www.cecb2b.com

FCH20N60 / FCA20N60 600V N-Channel MOSFETTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended tobe an exhaustive list of all such trademarks.ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™FACT Quiet Series™FAST®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™Across the board. Around the world.™The Power Franchise®Programmable Active Droop™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench®QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic®TINYOPTO™TruTranslation™UHC™UltraFET®UniFET™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES ITCONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES ORSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) supportor sustain life, or (c) whose failure to perform when properly usedin accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to theuser.2. A critical component is any component of a life support deviceor system whose failure to perform can be reasonably expectedto cause the failure of the life support device or system, or toaffect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative or In DesignFirst ProductionDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.PreliminaryNo Identification NeededFull ProductionObsoleteNot In ProductionRev. I159FCH20N60 / FCA20N60 Rev. Awww.fairchildsemi.com