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专利名称：Structure Model description and use for
scatterometry-based semiconductormanufacturing process metrology
发明人：Michael Kotelyanskii,Xueping Ru,Robert G.
Wolf,Yue Yang
申请号：US12227387申请日：20070514
公开号：US20090306941A1公开日：20091210
专利附图：
摘要：A method includes accessing a structure model defining a cross-sectional
profile of a structure on a sample. The cross-sectional profile is at least partially definedusing a set of blocks. Each of the blocks includes a number of vertices. One or more ofthe vertices are expressed using one or more algebraic relationships between a numberof parameters corresponding to the structure. Information is evaluated from thestructure model to produce expected metrology data for a scatterometry-based opticalmetrology. The expected metrology data is suitable for use for determining one or moreof the number of parameters corresponding to the structure. Apparatus are alsodisclosed.
申请人：Michael Kotelyanskii,Xueping Ru,Robert G. Wolf,Yue Yang
地址：Chatham NJ US,Washington NJ US,Hackettstown NJ US,Millburn NJ US
国籍：US,US,US,US
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